The present solution to the scalability problem is 3D NAND, or V-NAND as Samsung calls it. Traditionally NAND and other semiconductors are scaled horizontally along the X and Y axes but due to the laws of physics, there is a limit of how small the transistors can be made. To solve the problem, 3D NAND introduces a Z-axis i.e. a vertical dimension. Instead of cramming transistors horizontally closer and closer to each other, 3D NAND stacks layers of transistors on top of each other.